«Theoretical & Applied Science»

*Journal Archive p-ISSN 2308-4944 (print) e-ISSN 2409-0085 (online)**
ISJ Theoretical & Applied Science 11(19) 2014 ISPC European Science and Technology, Southampton, United Kingdom
*** Scientific Article * Scientific Article * Scientific Article * Scientific Article ***
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Kokolov AA MATHEMATICAL MODELS FOR MICROWAVE FET.
Impact Factor 1.500
Full Article: PDF Digital Object Identifier System: http://dx.doi.org/10.15863/TAS.2014.11.19.14 Language: Russian Citation: Kokolov AA (2014) MATHEMATICAL MODELS FOR MICROWAVE FET. ISJ Theoretical & Applied Science 11 (19): 70-76. doi: http://dx.doi.org/10.15863/TAS.2014.11.19.14
Pages: 70-76 Published: 30.11.2014 Abstract: Currently there are a huge number of field effect transistors nonlinear models, many of which apply to the High-electron-mobility transistor HEMT. In this article a review and classification of existing nonlinear models of microwave HEMT is performed. This review will be useful to engineers involved in the design of microwave devices to make the choice of microwave transistor models. Key words: nonlinear model, microwave FET, HEMT.

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