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Scientific Object Identifier: http://s-o-i.org/1.1/TAS-09-29-31
DOI: http://dx.doi.org/10.15863/TAS.2015.09.29.31
Language: English
Citation: Dieme N, Sane M, Barro IF (2015) EFFECT OF THE DOPING RATE ON THE SHUNT AND SERIES RESISTANCES OF A SILICON SOLAR CELL. ISJ Theoretical & Applied Science 09 (29): 162-168. Soi: http://s-o-i.org/1.1/TAS-09-29-31 Doi: http://dx.doi.org/10.15863/TAS.2015.09.29.31 |
Pages: 162-168
Published: 30.09.2015
Abstract: In this study we used a mathematical approach to determine the shunt and series resistances of the parallel vertical junction solar cell. This approach rests primarily on the current-voltage characteristic of the solar cell under a multi-spectral illumination in static regime. Taking ground on a diffusion equation, the current-voltage characteristic is determined, the shunt and series resistance are deducted. The aim of this work is to show the effect of the base doping level on these two parameters. For that to be, we illustrated the profile of these two parameters for various doping rates.
Key words: Shunt resistance, series resistance, parallel junction, doping rate, temperature.
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