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www.T-Science.org       p-ISSN 2308-4944 (print)       e-ISSN 2409-0085 (online)
SOI: 1.1/TAS         DOI: 10.15863/TAS

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ISJ Theoretical & Applied Science 07(27) 2015

ISPC Intelligent technologies, Marseille, France

* Scientific Article * Impact Factor 1.500


Dieme N, Sane M, Barro IF

PHOTOCURRENT AND PHOTOVOLTAGE UNDER INFLUENCE OF THE SOLAR CELL THICKNESS.

Full Article: PDF

Scientific Object Identifier: http://s-o-i.org/1.1/TAS-07(27)1

DOI: http://dx.doi.org/10.15863/TAS.2015.07.27.1

Language: English

Citation: Dieme N, Sane M, Barro IF (2015) PHOTOCURRENT AND PHOTOVOLTAGE UNDER INFLUENCE OF THE SOLAR CELL THICKNESS. ISJ Theoretical & Applied Science 07 (27): 1-6. Soi: http://s-o-i.org/1.1/TAS-07-27-1 Doi: http://dx.doi.org/10.15863/TAS.07.27.1

Pages: 1-6

Published: 30.07.2015

Abstract: A theoretical study of a parallel vertical junction silicon solar cell under a multi-spectral illumination in static regime has been done under impact of the thickness of this solar cell. Based on the diffusion-recombination equation, the expression of excess minority carrier density in the base was established according to the thickness. Photocurrent density and photovoltage are then deduced. The objective of this work is to show the effects of solar cell thickness on these electrical parameters.

Key words: photocurrent density, photovoltage, thickness, Vertical junction.


 

 

 

 

 

 

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