ISJ Theoretical & Applied Science 08(124) 2023

Philadelphia, USA

Mammadov, I. M., Huseynov, R. K., Imanov, R. M., Tagieva, S. A., & Yusubova, L. E.

Investigation of the features of the distribution of resistivity over the thickness of a silicon wafer.

Full Article: PDF

Scientific Object Identifier: http://s-o-i.org/1.1/TAS-08-124-17

DOI: https://dx.doi.org/10.15863/TAS.2023.08.124.17

Language: English

Citation: Mammadov, I. M., Huseynov, R. K., Imanov, R. M., Tagieva, S. A., & Yusubova, L. E. (2023). Investigation of the features of the distribution of resistivity over the thickness of a silicon wafer. ISJ Theoretical & Applied Science, 08 (124), 187-191. Soi: http://s-o-i.org/1.1/TAS-08-124-17 Doi: https://dx.doi.org/10.15863/TAS.2023.08.124.17

Pages: 187-191

Published: 30.08.2023

Abstract: The high level of integration achieved in the modern microelectronics industry has led to the creation of devices with high speed and an unprecedented level of interconnection between elements. Such a rapid development of semiconductor electronics dictates the tightening of requirements for the perfection of the crystal structure and uniformity of the distribution of electrical properties in the bulk of the material. A serious problem in obtaining large-diameter single crystals without dislocations is the need to reduce the size of the microdefects involved in them. Because they significantly affect the performance of integrated circuits. The real prospects for creating extremely high-frequency circuits based on epitaxial heterostructures arouse the interest of researchers in the problems of obtaining layered structures and quantum-scale nanostructures.

Key words: resistivity, silicon wafer, microelectronics.