Full Article: PDF
Scientific Object Identifier: http://s-o-i.org/1.1/TAS-08-100-32
DOI: https://dx.doi.org/10.15863/TAS.2021.08.100.32
Language: English
Citation: Olimov, L. O., & Yusupov, A. K. (2021). Temperature dependence of transistor characteristics of electric signal amplification in optoelectronic devices. ISJ Theoretical & Applied Science, 08 (100), 169-171. Soi: http://s-o-i.org/1.1/TAS-08-100-32 Doi: https://dx.doi.org/10.15863/TAS.2021.08.100.32 |
Pages: 169-171
Published: 30.08.2021
Abstract: The article discusses the results obtained in determining the temperature dependence of the characteristics of a semiconductor transistor designed to amplify electrical signals. In particular, the voltage drops across the currents determined by the temperature increase was determined to be used as a parameter to measure the platform temperature, as well as the unusual nature of the direct current in certain temperature ranges was determined. can be used in the generation and amplification of signal oscillations, as well as in variable circuits.
Key words: optoelectronic devices, signal amplification, semiconductor transistor, temperature, current and voltage, emitter, collector, base, charge carriers, differential resistance, reverse mode, electron-hollow pair.
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