Full Article: PDF
Scientific Object Identifier: http://s-o-i.org/1.1/TAS-06-122-50
DOI: https://dx.doi.org/10.15863/TAS.2023.06.122.50
Language: English
Citation: Yulchiev, I. I. (2023). The analysis of the numerical calculation of shallow acceptor levels of AIIIBV crystals in a magnetic field. ISJ Theoretical & Applied Science, 06 (122), 309-315. Soi: http://s-o-i.org/1.1/TAS-06-122-50 Doi: https://dx.doi.org/10.15863/TAS.2023.06.122.50 |
Pages: 309-315
Published: 30.06.2023
Abstract: Using the method of invariants, a general formula is obtained for the energy of the Zeeman splitting of the acceptor shallow level for semiconductor crystals of the AIIIBV type in an arbitrary direction of the magnetic field H. It is shown that if the value of g2/g1 is close to "singular" values, such as -4/7 and -4/7 or falls into the transition region [-4/13, -4/7], then it is necessary to carefully monitor the course of each magnetic sublevel of the acceptor. It is for such values of g2/g1 that pairwise merging or complex entanglement of sublevels and strong anisotropy of the Zeeman splitting are observed. This, in turn, leads to a strong anisotropy of the recombination radiation between the conduction band and the acceptor level in a "strong" magnetic field at .
Key words: crystals AIIIBV, shallow acceptor, g-factor, symmetry of the centre of the Brillouin zone, regular wave functions, Zeeman splitting anisotropy.
|
